·IGBT
The IGBT is short for Insulated Gate Bipolar Transistor. This device is combined by MOSFET and Bipolar-Junction Transistor. Its input terminal is MOSFET, and the output terminal is PNP transistor. It blends the advantages of the two devices with low drive power and fast switching, bipolar device low saturation voltage and capacious. The frequency characteristic is between MOSFET and power transistors, which work in the range of dozens of kHz. It is found increasingly in modern power electronic technology and has won the very important status in the application of large and medium power.
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